英文版
微波射頻元部件封裝
Diode Submounts
| Dielectric Material | Thermal Conductivity (w/mk) | TCE (PPM/°C) | Dielectric Constant | Comment |
|---|---|---|---|---|
| Alumina (99.6%) | 26 – 27 | 7.2 | 9.9 | "Good Thermal Compatibility with GaAs-Based Devices" |
| Aluminum Nitride | 170 – 210 | 4.6 | 8.9 | "Good Thermal Compatibility with Si-Based Devices" |
| Beryllium Oxide | 260 – 290 | 8.5 | 6.7 | "Good Thermal Compatibility with GaAs-Based Devices Superior Thermal Performance" |
Standard Submount Metalizations
| Metallization | Thickness | Comments |
|---|---|---|
| Ti/Pt/Au | 1K? / 1.5 K? / 5K? | Best/Universal Choice |
| Ti /Ni/Au | 1K? / 1.5 K? / 10K? Min. | Ni Diffusion above 350 °C |
| Au/Sn (80/20) | 3 to 5 microns | Chip Preform Replacement |